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| HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd. Edition Aug. 2002 Features * Capable of 4.5 V gate drive * Low drive current * High density mounting * Low on-resistance RDS(on) = 4.2 m typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123 HAT2096H Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg Note2 Note1 Ratings 30 20 40 160 40 20 150 -55 to + 150 Unit V V A A A W C C Rev.2, Aug. 2002, page 2 of 10 HAT2096H Electrical Characteristics (Ta = 25C) Item Symbol Min 30 20 -- -- 1.0 -- -- 30 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 4.2 7.0 50 2200 600 330 40 7 8 20 49 62 15 0.85 60 Max -- -- 10 1 2.5 5.3 10 -- -- -- -- -- -- -- -- -- -- -- 1.11 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 10 V ID = 20 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 40 A VGS = 10 V, ID = 20 A VDD 10 V RL = 0.5 Rg = 4.7 IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/ dt = 50 A/ s Note3 Note3 Note3 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF ID = 20 A, VGS = 4.5 V Note3 Body-drain diode reverse recovery trr time Notes: 3. Pulse test Rev.2, Aug. 2002, page 3 of 10 HAT2096H Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) 500 100 DC Maximum Safe Operation Area 10 10 0 s 1m s 30 PW Op 10 =1 s Channel Dissipation 20 Drain Current era tio s n 0m 1 10 0.1 Operation in this area is limited by R DS(on) Tc = 25C 1 shot Pulse 0 50 100 150 Tc (C) 200 Case Temperature 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 10 V 3.5 V I D (A) 40 4.5 V 30 3V 20 50 Pulse Test (A) 40 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current 30 25C Tc = 75C -25C Drain Current 20 10 VGS = 2.5 V 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) Rev.2, Aug. 2002, page 4 of 10 HAT2096H Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) VGS = 4.5 V V DS(on) (V) Pulse Test 0.16 Drain to Source Voltage 0.12 0.08 I D = 10 A 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V) 0.04 Static Drain to Source on State Resistance R DS(on) (m ) Pulse Test 16 I D = 2 A, 5 A, 10 A Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 Drain to Source On State Resistance R DS(on) (m ) 0.20 Forward Transfer Admittance vs. Drain Current 100 30 10 25C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Tc = -25C 75C 12 V GS = 4.5 V 8 4 10 V 0 -40 2 A, 5 A, 10 A 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) Rev.2, Aug. 2002, page 5 of 10 HAT2096H Body-Drain Diode Reverse Recovery Time 1000 10000 3000 1000 Coss 300 Crss 100 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Ciss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 di / dt = 50 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Capacitance C (pF) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 20 200 V DS (V) 50 V GS 16 V DD = 25 V 10 V 5V V GS (V) I D = 40 A 100 Switching Time t (ns) 40 t d(off) tr Drain to Source Voltage 50 20 10 5 V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20 t d(on) tf 30 V DS 12 20 8 10 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 Gate to Source Voltage 0 2 0.1 0.2 Rev.2, Aug. 2002, page 6 of 10 HAT2096H Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) 40 10 V 5V V GS = 0 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.3 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 6.25C/ W, Tc = 25C PDM 0.03 0.02 1 0.0 D= PW T PW T 0.01 10 1 sh p ot e uls 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Rev.2, Aug. 2002, page 7 of 10 HAT2096H Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% Rev.2, Aug. 2002, page 8 of 10 HAT2096H Package Dimensions As of January, 2002 Unit: mm 4.9 5.3 Max 4.0 0.2 5 0.25 -0.03 +0.05 3.3 1.0 3.95 1 4 6.1 -0.3 +0.1 0 - 8 1.1 Max +0.03 0.07 -0.04 0.75 Max 1.27 0.10 0.40 0.06 0.25 M 0.6 -0.20 1.3 Max +0.25 0.20 -0.03 +0.05 Hitachi Code JEDEC JEITA Mass (reference value) LFPAK -- -- 0.080 g Rev.2, Aug. 2002, page 9 of 10 4.2 HAT2096H Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.2, Aug. 2002, page 10 of 10 |
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